2SB649C(TO-126C) [JCST]
Transistor;
| 型号： | 2SB649C(TO-126C) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SB649/2SB649A TRANSISTOR (PNP)
TO- 126C
FEATURES
Low Frequency Power Amplifier Complementary Pair
with 2SD669/A
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
Unit
VCBO
-180
V
VCEO
2SB649
2SB649A
Emitter-Base Voltage
-120
-160
-5
V
VEBO
IC
V
A
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
-1.5
1
PC
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V
IC =-1mA,IE=0
-180
-120
-160
-5
IC=-10mA,IB=0
2SB649
Collector-emitter breakdown voltage
V(BR)CEO
V
2SB649A
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
V
IE=-1mA, IC =0
VCB=-160V,IE=0
VEB=-4V,IC=0
µA
µA
-10
IEBO
-10
320
200
V
CE=-5V,IC=-150mA
2SB649
60
60
30
hFE(1)
2SB649A
DC current gain
hFE(2)
VCE(sat)
VBE
VCE=-5V,IC=-500mA
IC=-500mA,IB=-50mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-150mA
VCB=-10V,IE=0,f=1MHz
Collector-emitter saturation voltage
Base-emitter voltage
V
V
-1
-1.5
Transition frequency
MHz
pF
fT
140
27
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Cob
B
C
D
60-120
60-120
100-200
100-200
160-320
Range
2SB649
2SB649A
A,Jun,2011
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