2SC2655Y [JCST]

Transistor;
2SC2655Y
型号: 2SC2655Y
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Transistor

文件: 总2页 (文件大小:369K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92L Plastic-Encapsulate Transistors  
TO-92L  
2SC2655  
TRANSISTOR (NPN)  
FEATURES  
1.EMITTER  
z
z
z
Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A)  
High Speed Switching Time: tstg=1μs(Typ.)  
Complementary to 2SA1020  
2.COLLECTOR  
3.BASE  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Symbol  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
50  
V
V
5
V
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
2
A
PC  
0.9  
W
TJ  
150  
-55-150  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
50  
50  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=100μA,IE=0  
V(BR)CEO IC=10mA,IB=0  
V(BR)EBO IE=100μA,IC=0  
V
V
ICBO  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCB=50V,IE=0  
1
1
μA  
μA  
Emitter cut-off current  
VEB=5V,IC=0  
VCE=2V,IC=500mA  
VCE=2V,IC=1.5A  
IC=1A,IB=0.05A  
IC=1A,IB=0.05A  
VCE=2V,IC=0.5A  
VCB=10V,IE=0,f=1MHz  
70  
40  
240  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
0.5  
1.2  
V
V
100  
MHz  
pF  
Collector output capacitance  
Tune on Time  
Cob  
30  
0.15  
2
ton  
V
CC=30V,Ic=1A,  
Switch time  
μs  
Storage Time  
Fall Time  
tstg  
IB1=-IB2=0.05A  
tf  
0.15  
CLASSIFICATION OF hFE  
(1)  
Rank  
O
Y
Range  
70-140  
120-240  
A,Jun,2011  
2SC2655Y-CAN  
Typical Characterisitics  
hFE ——  
IC  
Static Characteristic  
1.2  
400  
300  
200  
100  
0
COMMON EMITTER  
COMMON EMITTER  
VCE=2V  
5mA  
Ta=25  
4.5mA  
4mA  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Ta=100℃  
Ta=25℃  
3.5mA  
3mA  
2.5mA  
2mA  
1.5mA  
1mA  
IB=0.5mA  
0
2
4
6
8
10  
0.01  
0.1  
1
2
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT IC (A)  
VCEsat ——  
IC  
VBEsat —— IC  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
0.8  
0.4  
0.0  
β=20  
Ta=25℃  
Ta=100℃  
Ta=100℃  
Ta=25℃  
β=20  
0.01  
0.1  
1
0.01  
0.1  
1
2
2
COLLECTOR CURRENT IC (A)  
COLLECTOR CURRENT IC (A)  
VCB/ VEB  
Cob/ Cib ——  
IC —— VBE  
1000  
100  
10  
2
COMMON EMITTER  
VCE=2V  
f=1MHz  
IE=0/ IC=0  
1
Cib  
Ta=25℃  
Cob  
Ta=100℃  
Ta=25℃  
0.1  
0.01  
0.2  
1
0.1  
20  
0.4  
0.6  
0.8  
1.0  
1.2  
1
10  
BASE-EMMITER VOLTAGE VBE (V)  
REVERSE VOLTAGE  
V
(V)  
Pc —— Ta  
1000  
800  
600  
400  
200  
0
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE Ta ()  
A,Jun,2011  

相关型号:

2SC2655_06

Silicon NPN Epitaxial Type (PCT Process)
UTC

2SC2655_09

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
UTC

2SC2655_11

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
UTC

2SC2656

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING
FUJI

2SC2656

Silicon NPN Power Transistor
ISC

2SC2657

isc Silicon NPN Power Transistor
ISC

2SC2658

isc Silicon NPN Power Transistor
ISC

2SC2658-Q

NPN Plastic Encapsulated Transistor
SECOS

2SC2658-R

NPN Plastic Encapsulated Transistor
SECOS

2SC2658-S

NPN Plastic Encapsulated Transistor
SECOS

2SC2659

Silicon NPN Power Transistor
ISC

2SC2660

Silicon NPN Power Transistors
SAVANTIC