2SC4115SQ [JCST]
Transistor;
| 型号： | 2SC4115SQ |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
2SC4115S TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
z
Low VCE(sat)
.
Excellent Current Gain Characteristics.
Complements The 2SA1585S.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
40
20
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
300
417
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
40
20
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IC=0.05mA,IE=0
IC=1mA,IB=0
V
IE=0.05mA,IC=0
VCB=30V,IE=0
V
0.1
0.1
560
0.5
μA
μA
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=2V, IC=100mA
IC=2A,IB=0.1A
120
*
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
V
25
pF
Cob
fT
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=0.5A, f=100MHz
290
MHz
*Pulse test
CLASSIFICATION OF hFE
RANK
Q
R
S
RANGE
120-270
180-390
270-560
A,Dec,2010
相关型号：
2SC4115STPQ
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN
ROHM
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