2SC4375Y [JCST]
Transistor;
| 型号： | 2SC4375Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SC4375
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
z
z
Small Flat Package
Low Collector- Emitter Saturation Voltage
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
30
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current
1.5
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
mW
℃/W
℃
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
30
30
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IC=1mA,IE=0
IC=10mA,IB=0
V
IE=1mA,IC=0
V
VCB=30V,IE=0
0.1
0.1
320
2
µA
µA
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=2V, IC=500mA
IC=1.5A,IB=30mA
VCE=2V, IC=500mA
VCE=2V,IC=500mA
VCB=10V, IE=0, f=1MHz
100
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
fT
120
MHz
pF
Transition frequency
Collector output capacitance
Cob
40
CLASSIFICATION OF hFE
RANK
RANGE
O
Y
100–200
GO
160–320
MARKING
GY
A,Nov,2010
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