2SC5171 [JCST]
Transistor;
| 型号： | 2SC5171 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TO – 220F
2SC5171 TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
High Transition Frequency
Power Amplifier Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
180
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
180
5
V
Collector Current
2
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
W
℃/W
℃
RθJA
Tj
62.5
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
180
180
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=100µA,IE=0
IC=10mA,IB=0
*
V(BR)CEO
V
V(BR)EBO
ICBO
IE=1mA,IC=0
V
VCB=180V,IE=0
VEB=5V,IC=0
5
5
μA
μA
Emitter cut-off current
IEBO
hFE(1)
VCE=5V, IC=0.1A
VCE=5V, IC=1A
IC=1A,IB=100mA
VCE=5V, IC=1A
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=300mA
100
50
320
DC current gain
*
hFE(2)
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
Cob
1
V
V
1.5
16
pF
Collector output capacitance
Transition frequency
fT
200
MHz
*Pulse test
A,Dec,2010
相关型号：
2SC5172
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
TOSHIBA
2SC5172_06
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明