2SC536H [JCST]
Transistor;
| 型号： | 2SC536H |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体管 |
| 文件： | 总1页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC536 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
General Purpose Amplifier Transistor
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
40
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current
0.1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
0.4
W
RθJA
Tj
312
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
40
30
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 0.1mA,IE=0
IC=1mA,IB=0
V
IE=0.1mA,IC=0
VCB=35V,IE=0
VEB=4V,IC=0
V
1
1
μA
μA
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=6V, IC=1mA
IC=50mA,IB=5mA
VCB=6V, f=1MHz
VCE=6V,IC=1mA
60
960
0.5
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
Cob
V
3.5
pF
fT
100
MHz
CLASSIFICATION OF hFE
RANK
D
E
F
G
H
RANGE
60-120
100-200
160-320
280-560
480-960
A,Dec,2010
相关型号：
2SC536K
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CDIL
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