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2SD1815T(TO-251) [JCST]

Transistor;
2SD1815T(TO-251)
型号： 2SD1815T(TO-251)
厂家： JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述：

Transistor
文件： 总2页 (文件大小：1371K)
中文：  中文翻译
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-251/TO-252-2L Plastic-Encapsulate Transistors  
TO-251  
2SD1815 TRANSISTOR (NPN)  
TO-252-2L  
FEATURES  
z
z
z
z
Low collector-to-emitter saturation voltage  
1. BASE  
1
Excllent linearity of hFE  
High fT  
2
2. COLLECTOR  
3. EMITTER  
3
Fast switching time  
MAXIMUM RATINGS (Ta=25 unless otherwise note)  
℃
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
Units  
V
120  
100  
V
6
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
3
A
PC  
1
W
℃
℃
TJ  
150  
Storage Temperature  
-55 to +150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
120  
100  
6
Typ  
Max Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=10μA, IE=0  
V(BR)CEO IC=1mA, IB=0  
V(BR)EBO IE=10μA, IC=0  
V
V
V
ICBO  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCB=100V, IE=0  
VEB=4V, IC=0  
1
1
μA  
μA  
Emitter cut-off current  
VCE=5V, IC=500mA  
VCE=5V, IC=2A  
70  
40  
400  
DC current gain  
Collector-emitter saturation voltage  
Base -emitter saturation voltage  
Transition frequency  
Collector output capacitance  
Turn-on time  
IC=1.5A, IB=150mA  
IC=1.5A, IB=150mA  
VCE=10V, IC=500mA  
VCB=10V, IE=0, f=1MHz  
0.4  
1.2  
V
V
180  
25  
MHz  
pF  
nS  
nS  
nS  
Cob  
100  
900  
50  
ton  
Storage time  
tS  
V
CC=50V,IC=1.5A, IB1=-IB2=-0.15A  
Fall time  
tf  
CLASSIFICATION OF hFE(1)  
Rank  
Q
R
S
T
Range  
70-140  
100-200  
140-280  
200-400  
A,Feb,2011  
Typical Characteristics  
2SD1815  
hFE —— IC  
Static Characteristic  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
300  
5.0mA  
VCE=5V  
COMMON  
EMITTER  
Ta=25℃  
4.5mA  
Ta=100℃  
Ta=25℃  
4.0mA  
3.5mA  
3.0mA  
2.5mA  
2.0mA  
200  
100  
0
1.5mA  
1.0mA  
IB=0.5mA  
0.3  
3
0
2
4
6
8
10  
0.1  
1
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT IC (A)  
VBEsat —— IC  
VCEsat —— IC  
1200  
1000  
800  
1000  
β=10  
300  
100  
Ta=25℃  
600  
Ta=100℃  
Ta=25℃  
Ta=100℃  
30  
10  
400  
β=10  
200  
1E-3  
0.01  
0.1  
1
3
1E-3  
0.01  
0.1  
1
3
COLLECTOR CURRENT IC (A)  
COLLECTOR CURRENT IC (A)  
VCB / VEB  
PC —— Ta  
Cob / Cib ——  
1000  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
f=1MHz  
IE=0/IC=0  
Ta=25℃  
Cib  
300  
100  
Cob  
30  
10  
0.3  
0.1  
1
3
10  
0
25  
50  
75  
100  
125  
150  
REVERSE BIAS VOLTAGE  
V
(V)  
AMBIENT TEMPERATURE Ta (℃)  
A,Feb,2011  

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