2SD1819AS [JCST]
Transistor;
| 型号： | 2SD1819AS |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SD1819A TRANSISTOR (NPN)
FEATURES
SOT–323
High DC Current Gain
Complementary to 2SB1218A
Low Collector to Emitter Saturation Voltage
APPLICATIONS
General Purpose Amplification
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
7
Collector Current
100
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
150
PC
RΘJA
Tj
833
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
50
7
Typ
Max
Unit
V
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=2mA, IB=0
V(BR)EBO IE=10µA, IC=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
ICBO
ICEO
IEBO
VCB=20V, IE=0
VCE=10V, IB=0
VEB=7V, IC=0
0.1
100
0.1
µA
µA
µA
Collector cut-off current
Emitter cut-off current
hFE(1)
hFE(2)
VCE(sat)
fT
VCE=10V, IC=2mA
160
90
460
DC current gain
VCE=2V, IC=0.1A
IC=100mA, IB=10mA
VCE=10V,IC=2mA , f=200MHz
VCB=10V, IE=0, f=1MHz
0.3
V
Collector-emitter saturation voltage
Transition frequency
150
3.5
MHz
pF
Cob
Collector output capacitance
CLASSIFICATION OF hFE(1)
RANK
Q
R
210–340
ZR
S
RANGE
160–260
290–460
MARKING
ZQ
ZS
A,Oct,2010
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