2SD2061 [JCST]
TO-220F Plastic-Encapsulate Transistors; TO- 220F塑封装晶体管
| 型号： | 2SD2061 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TO-220F Plastic-Encapsulate Transistors |
| 文件： | 总2页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2061 TRANSISTOR (NPN)
TO-220F
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
Low saturation voltage
Excellent DC current gain characteristice
z
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Paramenter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
80
60
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
2
A
PC
W
℃
℃
Tj
150
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Tstg
Storage Temperature Range
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
80
60
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50µA, IC=0
V
V
ICBO
IEBO
VCB=60V, IE=0
10
10
320
1
µA
µA
Emitter cut-off current
VEB=4V, IC=0
DC current gain
hFE
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
100
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
IC=2A, IB=0.2A
1.5
VCE=5V, IC=0.5A, f=5MHz
VCB=10V, IE=0, f=1MHz
8
MHz
pF
Collector output capacitance
Cob
70
Typical Characteristics
2SD2061
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