2SD2152Q [JCST]
Transistor;
| 型号： | 2SD2152Q |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SD2152 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
High DC Current Gain
Low Saturation Medium Current Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
22
22
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
3
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
700
178
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
22
22
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 0.05mA,IE=0
IC=1mA,IB=0
V
IE=0.01mA,IC=0
V
VCB=20V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1)
VCE=2V, IC=0.15mA
VCE=2V, IC=100mA
VCE=2V, IC=500mA
IC=2000mA,IB=100mA
VCE=6V,IC=50mA, f=30MHz
130
180
180
DC current gain
hFE(2)
950
0.4
hFE(3)
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
150
MHz
CLASSIFICATION OF hFE
Q
R
S
T
RANK
180-290
270-380
340-560
560-950
RANGE
A,Dec,2010
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