2SD667AB(TO-92MOD) [JCST]
Transistor;
| 型号： | 2SD667AB(TO-92MOD) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
2SD667,2SD667A TRANSISTOR (NPN)
1. EMITTER
FEATURES
z
Low Frequency Power Amplifier
Complementary Pair with 2SB647/A
2. COLLECTOR
3. BASE
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Value
120
80
Unit
V
VCEO
2SD667
V
2SD667A
100
5
VEBO
IC
Emitter-Base Voltage
V
A
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
1
PC
900
150
-55-150
mW
TJ
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
120
80
Typ
Max
Unit
V
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=10μA,IC=0
2SD667
V
Collector-emitter breakdown voltage
2SD667A
100
5
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
ICBO
IEBO
VCB=100V,IE=0
VEB=4V,IC=0
10
10
μA
μA
2SD667
60
60
30
320
320
hFE(1)
VCE=5V,IC=150mA
DC current gain
2SD667A
hFE(2)
VCE(sat)
VBE
VCE=5V,IC=500mA
IC=500mA,IB=50mA
VCE=5V,IC=150mA
VCE=5V,IC=150mA
VCB=10V,IE=0,f=1MHz
Collector-emitter saturation voltage
Base-emitter voltage
1
V
V
1.5
Transition frequency
fT
140
12
MHz
pF
Collector output capacitance
CLASSIFICATION OF hFE(1)
Rank
Cob
B
C
D
2SD667
Range
60-120
60-120
100-200
100-200
160-320
2SD667A
160-320
A,Jun,2011
相关型号：
2SD667ABTZ
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92MOD, 3 PIN
HITACHI
©2020 ICPDF网 联系我们和版权申明