2SD794R [JCST]
Transistor;
| 型号： | 2SD794R |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SD794/794A TRANSISTOR (NPN)
TO- 126C
FEATURES
z
z
High Voltage and Large Current Capacity
Complementary to 2SB744,2SB744A
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage 2SD794
2SD794A
Value
Unit
70
V
45
VCEO
V
60
VEBO
IC
Emitter-Base Voltage
5
V
A
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
3
PC
1
W
℃
℃
TJ
150
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 ℃
unless otherwise specified
)
Parameter
Symbol
V(BR)CBO
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V
IC=100µA,IE=0
IC=1mA,IB=0
70
2SD794
45
60
Collector-emitter breakdown voltage
V(BR)CEO
V
2SD794A
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
V
IE=100µA,IC=0
5
µA
µA
VCB=45V,IE=0
1
1
IEBO
VEB=3V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=5V,IC=20mA
VCE=5V,IC=0.5A
IC=1.5A,IB=0.15A
IC=1.5A,IB=0.15A
VCE=5V,IC=100mA
VCB=10V,IE=0,f=1MHz
30
60
DC current gain
320
2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
V
2
MHz
pF
60
40
Collector output capacitance
Cob
CLASSIFICATION OF hFE(2)
R
Q
P
Rank
60-120
100-200
160-320
Range
Marking
A,Jun,2011
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