2SD880GR(TO-220) [JCST]
Transistor;
| 型号： | 2SD880GR(TO-220) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SD880 TRANSISTOR (NPN)
TO-220
FEATURES
z
Low frequency power amplifier
Complement to 2SB834
1. BASE
2. COLLECTOR
3. EMITTER
z
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
60
V
7
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
A
PC
1.5
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=100µA, IE=0
60
60
7
V
V
IC=50mA, IB=0
IE= 100µA, IC=0
VCB=60V, IE=0
V
100
100
300
1
µA
µA
IEBO
VEB=7V, IC=0
hFE
VCE=5V, IC=500mA
IC=3A, IB=300mA
IC=0.5A, VCE= 5V
VCE=5 V, IC=500mA
VCB=10V, IE=0, f=1MHz
60
Collector-emitter saturation voltage
Base-emitter voltage
VCE (sat)
VBE
V
V
1
Transition Frequency
f T
3
MHz
pF
µs
Collector output capacitance
Turn on time
Cob
70
ton
0.8
1.5
0.8
IB1=-IB2=0.2A, IC=2A
Storage time
t s
µs
VCC=30V, PW=20µs
Fall time
t f
µs
CLASSIFICATION OF hFE
Rank
O
Y
GR
60-120
100-200
150-300
Range
A,Mar,2011
Typical Characteristics
2SD880
A,Mar,2011
©2020 ICPDF网 联系我们和版权申明