3DD13001-TO-251 [JCST]
TRANSISTOR( NPN ); 晶体管( NPN )型号: | 3DD13001-TO-251 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR( NPN ) |
文件: | 总2页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR( NPN )
TO— 251
FEATURES
Power dissipation
PCM : 1.2
Collector current
ICM : 0.2
W(Tamb=25℃)
1.BASE
A
2.COLLECTOR
Collector-base voltage
V(BR)CBO : 600
3.EMITTER
V
Operating and storage junction temperature range
1
2
3
TJ,Tstg: -55℃ to +150℃
ELECTRICAL
CHARACTERISTICS ( Tamb=25 ℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
600
400
7
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 100μA ,IE=0
IC= 1 mA , IB=0
IE= 100 μA,IC=0
VCB= 600 V , IE=0
VCE= 400 V , IB=0
VEB= 7 V , IC=0
VCE= 20 V, IC= 20mA
VCE= 10V, IC= 0.25 mA
IC= 50mA, IB= 10 mA
IC= 50 mA, IB= 10mA
IE= 100 mA,
V
V
100
200
100
40
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
10
5
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.5
1.2
1.1
V
V
V
VCE= 20 V, I =20mA
C
Transition frequency
8
MHz
f
T
f = 1MHz
IC=50mA,
Fall time
0.3
1.5
μs
μs
t
f
IB1=-IB2=5mA,
Storage time
t S
VCC=45V
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
TO-251 PACKAGE OUTLINE DIMENSIONS
D
A
D1
C1
b1
b
e
A1
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
2.200
1.020
1.350
0.500
0.700
0.430
0.430
6.350
5.200
5.400
2.400
1.270
1.650
0.700
0.900
0.580
0.580
6.650
5.400
5.700
0.087
0.040
0.053
0.020
0.028
0.017
0.017
0.250
0.205
0.213
0.094
0.050
0.065
0.028
0.035
0.023
0.023
0.262
0.213
0.224
A1
B
b
b1
c
c1
D
D1
E
2.300TYP
0.091TYP
e
e1
L
4.500
7.500
4.700
7.900
0.177
0.295
0.185
0.311
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