3DD13002-TO-251 [JCST]
TRANSISTOR( NPN ); 晶体管( NPN )![3DD13002-TO-251](http://pdffile.icpdf.com/pdf1/p00166/img/icpdf/3DD13_927352_icpdf.jpg)
型号: | 3DD13002-TO-251 |
厂家: | ![]() |
描述: | TRANSISTOR( NPN ) |
文件: | 总3页 (文件大小:874K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13002
TRANSISTOR( NPN )
TO— 251
FEATURES
Power dissipation
PCM
Collector current
ICM
:
1.25
1
W(Tamb=25℃)
1.BASE
2.COLLECTOR
3.EMITTER
:
A
V
Collector-base voltage
V(BR)CBO : 600
1
2
3
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic= 100μA, IE=0
Ic= mA, IB=0
IE= 100μA, IC=0
conditions
MIN
600
400
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
1
V
V
VCB= 600
VEB= 6
V, IE=0
V, IC=0
100
100
40
µA
µA
Emitter cut-off current
IEBO
hFE(1)
VCE= 10 V, IC= 200 mA
VCE= 10 V, IC=250 µA
IC=200mA, IB= 40 mA
IC=200mA, IB= 40 mA
9
5
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.8
1.1
V
V
VCE=10V, Ic=100mA
f =1MHz
Transition frequency
fT
5
MHz
IC=1A, I =-IB2=0.2A
B1
Fall time
tf
0.5
2.5
µs
µs
Storage time
ts
VCC=100V
CLASSIFICATION OF hFE
(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40
TO-251 PACKAGE OUTLINE DIMENSIONS
D
A
D1
C1
b1
b
e
A1
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
2.200
1.020
1.350
0.500
0.700
0.430
0.430
6.350
5.200
5.400
2.400
1.270
1.650
0.700
0.900
0.580
0.580
6.650
5.400
5.700
0.087
0.040
0.053
0.020
0.028
0.017
0.017
0.250
0.205
0.213
0.094
0.050
0.065
0.028
0.035
0.023
0.023
0.262
0.213
0.224
A1
B
b
b1
c
c1
D
D1
E
2.300TYP
0.091TYP
e
e1
L
4.500
7.500
4.700
7.900
0.177
0.295
0.185
0.311
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