3DG8051 [JCST]
Transistor;
| 型号： | 3DG8051 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
3DG8051 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
General Purpose Switching Application
Complementary to 3CG8551
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
50
40
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
750
167
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
50
40
5
Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 0.1mA,IE=0
IC=10mA,IB=0
V
V
V
IE=0.1mA,IC=0
VCB=50V,IE=0
0.1
2
μA
μA
μA
Collector cut-off current
ICEO
VCE=40V,IB=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
320
1
DC current gain
hFE
VCE=2V, IC=0.1A
IC=1A,IB=0.1A
100
150
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
VCE=10V,IC=50mA, f=100MHz
MH
A,Dec,2010
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