A42-TO-92 [JCST]
TRANSISTOR( NPN ); 晶体管( NPN )型号: | A42-TO-92 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR( NPN ) |
文件: | 总3页 (文件大小:257K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A42 TRANSISTOR( NPN )
TO— 92
FEATURES
Power dissipation
PCM : 0.625
Collector current
ICM : 0.5
W(Tamb=25℃)
1.EMITTER
2.BASE
A
V
Collector-base voltage
V(BR)CBO : 300
3.COLLECTOR
1 2 3
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
300
300
5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
Ic= 100μA, IE=0
Ic= 1 mA, IB=0
IE= 100μA, IC=0
VCB= 200 V IE=0
0.25
0.1
μA
μA
Emitter cut-off current
IEBO
VEB=
5
V, IC=0
hFE(1)
VCE= 10 V, IC= 1 mA
VCE= 10V, IC = 10 mA
VCE= 10 V, IC=30 mA
IC= 20 mA, IB= 2 mA
IC= 20mA, IB= 2 mA
60
80
75
DC current gain
hFE(2)
250
HFE(3)
VCE(sat)
VBE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.2
0.9
V
V
VCE=20 V, I = 10 mA
C
Transition frequency
50
MHz
fT
f =30MHz
CLASSIFICATION OF hFE(2)
Rank
A
B1
B2
C
Range
80-100
100-150
150-200
200-250
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
相关型号:
©2020 ICPDF网 联系我们和版权申明