A42B1(SOT-89-3L) [JCST]
Transistor;
| 型号： | A42B1(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
A42
TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
Low Collector-Emitter Saturation Voltage
High Breakdown Voltage
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
310
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
305
V
5
V
Collector Current
500
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
310
305
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC=100µA,IE=0
IC=1mA,IB=0
V
IE=100µA,IC=0
V
VCB=200V,IE=0
0.25
0.25
5
µA
µA
µA
µA
Collector cut-off current
Emitter cut-off current
DC current gain
VCE=200V,IB=0
ICEO
VCE=300V,IB=0
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
VEB=5V,IC=0
0.1
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA,IB=2mA
IC=20mA,IB=2mA
VCE=20V,IC=10mA, f=30MHz
60
80
75
250
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.2
0.9
V
V
50
MHz
CLASSIFICATION OF hFE
（
）
2
RANK
A
B1
B2
150–200
C
RANGE
80–100
100–150
200–250
MARKING
A42
A,Nov,2010
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