A44-TO-92 [JCST]
TRANSISTOR（ NPN ）; 晶体管（ NPN ）
| 型号： | A44-TO-92 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR（ NPN ） |
| 文件： | 总3页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A44
TRANSISTOR（ NPN ）
TO— 92
FEATURES
1.EMITTER
2.BASE
Power dissipation
PCM : 0.625 W
Collector current
ICM : 0.2 A
Collector-base voltage
V(BR)CBO : 400 V
（Tamb=25℃）
3. COLLECTOR
1 2 3
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
400
400
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 100μA ， IE=0
IC= 1 mA ,
IE=100μA，
VCB=400 V ,
VCE=400 V ,
VEB= 4 V ,
IB=0
IC=0
IE=0
V
V
0.1
5
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
IC=0
0.1
300
HFE（1）
HFE（2）
HFE（3）
VCE(sat)
VCE(sat)
VBE(sat)
VCE=10V , IC=10 mA
VCE=10V, IC=1mA
VCE=10V ,IC=100 mA
IC=10 mA, IB=1mA
IC=50 mA, IB=5mA
IC=10 mA, IB= 1 mA
80
70
60
DC current gain
0.2
0.3
V
V
V
Collector-emitter saturation voltage
Base-emitter sataration voltage
Transition frequency
0.75
VCE=20V, I =10mA
C
f T
50
MHz
f =30MHz
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
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