A94-TO-92 [JCST]
TRANSISTOR( PNP ); 晶体管( PNP )型号: | A94-TO-92 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR( PNP ) |
文件: | 总3页 (文件大小:452K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94
TRANSISTOR( PNP )
FEATURES
TO— 92
Power dissipation
PCM: 0.625 W (Tamb=25℃)
Collector current
ICM: -0.2 A
Collector-base voltage
V(BR)CBO : -400 V
1.EMITTER
2.BASE
3. COLLECTOR
Operating and storage junction temperature range
1 2 3
TJ,Tstg: -55℃ to +150℃
ELECTRICAL
CHARACTERISTICS ( Tamb=25 ℃
unless otherwise specified)
Parameter
Symbol
V (BR)CBO
V (BR)CEO
V (BR)EBO
ICBO
Test
conditions
MIN
-400
-400
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= -100μA, IE=0
IC= -1 mA,IB=0
V
IE=-100μA,IC=0
VCB=-400 V, IE=0
V
-0.1
-5
μA
μA
μA
Collector cut-off current
ICEO
VCE=-400 V, IB=0
Emitter cut-off current
IEBO
VEB= -4 V, IC=0
-0.1
300
hFE(1)
VCE=-10V, IC=-10 mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-100 mA
IC=-10 mA,IB=-1mA
IC=-50 mA,IB=-5mA
IC=-10 mA,IB= -1 mA
80
70
60
DC current gain
hFE(2)
hFE(3)
VCE (sat)
VCE (sat)
VBE (sat)
fT
-0.2
-0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
-0.75
V
VCE=-20V, IC=-10mA
f =30MHz
50
MHz
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
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