B5817W-SOD-123 [JCST]
SCHOTTKY BARRIER DIODE; 肖特基二极管型号: | B5817W-SOD-123 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | SCHOTTKY BARRIER DIODE |
文件: | 总3页 (文件大小:334K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
SOD-123
B5817W SCHOTTKY BARRIER DIODE
FEATURES:
Power dissipation
PD :
450
mW(Tamb=25℃)
Collector current
2.70
3.70
IF:
Collector-base voltage
VR: 20
1
A
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
Unit:mm
MARKING:SJ
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
20
MAX
UNIT
Reverse breakdown voltage
Reverse voltage leakage current
V
(BR)
IR= 1mA
VR=20V
V
IR
VF
CD
1
mA
IF=1A
IF=3A
0.45
0.75
Forward voltage
V
Diode capacitance
VR=4V
f=1MHz
120
pF
SOD-123 PACKAGE OUTLINE DIMENSIONS
E
A1
A2
E1
A
L
L1
θ
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
1.050
0.000
1.050
0.450
0.080
1.500
2.600
3.550
1.250
0.100
1.150
0.650
0.150
1.700
2.800
3.850
0.041
0.000
0.041
0.018
0.003
0.059
0.102
0.140
0.049
0.004
0.045
0.026
0.006
0.067
0.110
0.152
A1
A2
b
c
D
E
E1
L
0.500REF
0.020REF
L1
θ
0.250
0°
0.450
8°
0.010
0°
0.018
8°
相关型号:
B5817W-TP
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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