B5819WS-SOD-323 [JCST]

SCHOTTKY BARRIER DIODE; 肖特基二极管
B5819WS-SOD-323
型号: B5819WS-SOD-323
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

SCHOTTKY BARRIER DIODE
肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:126K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOD-323 Plastic-Encapsulate Diode  
B5819WS SCHOTTKY BARRIER DIODE  
SOD-323  
FEATURES  
+
Power dissipation  
PD:  
200  
mW (Tamb=25)  
Collector current  
-
IF:  
Collector-base voltage  
VR:  
1
A
V
40  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
MARKING: SL  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
IR= 1mA  
MIN  
MAX  
UNIT  
Reverse breakdown voltage  
V(BR)  
40  
V
VR=40V  
VR=4V  
VR=6V  
1
Reverse voltage leakage current  
IR  
0.05  
0.075  
mA  
IF=0.1A  
IF=1A  
0.45  
0.6  
Forward voltage  
VF  
V
IF=3A  
0.9  
Diode capacitance  
CD  
VR=4V, f=1MHz  
120  
pF  
WS  

相关型号:

B5819WS-T

Rectifier Diode,
MCC

B5819WS-TP

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

B5819WSF2

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon,
YANGJIE

B581SE-2T

Silicon Controlled Rectifier, 27000mA I(T), 400V V(RRM), 2 Element,
CRYDOM

B581SE-2T

Silicon Controlled Rectifier, 400V V(RRM),
CYNERGY3

B582-2

Silicon Controlled Rectifier, 50000mA I(T), 600V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-5
CRYDOM

B582-2T

THYRISTOR MODULE
ETC

B582SE-2

Silicon Controlled Rectifier, 600V V(RRM),
CYNERGY3

B582SE-2T

Silicon Controlled Rectifier, 27000mA I(T), 600V V(RRM), 2 Element,
CRYDOM

B582SE-2T

Silicon Controlled Rectifier, 600V V(RRM),
CYNERGY3

B583-2

Silicon Controlled Rectifier, 800V V(RRM), 2 Element, MODULE-5
CYNERGY3

B583-2

Silicon Controlled Rectifier, 50000mA I(T), 800V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-5
CRYDOM