B772-TO-92 [JCST]
TRANSISTOR (PNP); 晶体管( PNP )型号: | B772-TO-92 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR (PNP) |
文件: | 总1页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
B772 TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
1. EMITTER
2. COLLECTOR
3. BASE
PCM:
625 mW (Tamb=25℃)
Collector current
ICM:
-3
A
V
Collector-base voltage
1 2 3
V(BR)CBO
:
-40
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-100µA ,IE=0
IC= -10 mA , IB=0
IE= -100µA, IC=0
VCB= -40 V, IE=0
VCE=-30 V, IB=0
VEB=-6V, IC=0
MIN
-40
-30
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
-1
-10
-1
µA
µA
µA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE(1)
VCE= -2V, IC= -1A
VCE=-2V, IC= -100mA
IC=-2A, IB= -0.2A
IC=-2A, IB= -0.2A
60
32
400
DC current gain
hFE(2)
VCE(sat)
VBE(sat)
-0.5
-1.5
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE= -5V, IC=-0.1A
50
MHz
Transition frequency
f T
f = 10MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
60-120
100-200
160-320
200-400
Range
相关型号:
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