BAS70WS-SOD-323 [JCST]
SCHOTTKY DIODE; 肖特基二极管
| 型号： | BAS70WS-SOD-323 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | SCHOTTKY DIODE |
| 文件： | 总3页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
SCHOTTKY DIODE
BAS70WS
SOD-323
Features
·
·
·
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
1.70
2.65
Marking:
BAS70WS:K73
Unit:mm
Maximum Ratings and Electrical Characteristics, Single Diode @ T = 25°C unless otherwise specified
A
Characteristic
Symbol
BAS70
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
70
V
VR(RMS)
IF
RMS Reverse Voltage
49
70
V
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s
Power Dissipation (Note 1)
mA
mA
mW
K/W
°C
IFSM
Pd
100
200
RqJA
Tj
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
625
-55 to +125
-65 to +150
TSTG
°C
@ TA = 25°C unless otherwise specified
Electrical Ratings
Characteristic
Symbol
V(BR)R
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
70
IR=10uA
V
tp <300µs, IF = 1.0mA
tp <300µs, IF = 15mA
410
1000
VF
Forward Voltage
—
mV
IRM
Cj
tp < 300µs, VR = 50V
VR = 0V, f = 1.0MHz
Peak Reverse Current
Junction Capacitance
¾
¾
100
2.0
nA
pF
IF = IR = 10mA to IR = 1.0mA,
RL =100W
trr
Reverse Recovery Time
—
5.0
ns
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
1 /1
SOD-323 PACKAGE OUTLINE DIMENSIONS
E
A2
A1
b
A
E1
L1
L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
1.050
0.000
1.050
0.200
0.080
1.200
1.600
2.500
1.250
0.100
1.150
0.400
0.150
1.400
1.800
2.800
0.041
0.000
0.041
0.008
0.003
0.047
0.063
0.098
0.049
0.004
0.045
0.016
0.006
0.055
0.071
0.110
A1
A2
b
c
D
E
E1
L
0.475REF
0.019REF
L1
θ
0.250
0°
0.450
8°
0.010
0°
0.018
8°
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