BC238-TA [JCST]
TO-92 Plastic-Encapsulate Transistors;
| 型号： | BC238-TA |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TO-92 Plastic-Encapsulate Transistors |
| 文件： | 总4页 (文件大小：1121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC237 / BC238 / BD239 TRANSISTOR (NPN)
FEATURES
TO-92
Amplifier dissipation NPN Silicon
1. COLLECTOR
2. BASE
ꢀꢁꢂꢃꢄꢅꢆ
3. EMITTER
BC237
BC238
BC239
ꢀ
ꢀ
ꢀ
X X X
X X X
X X X
1
1
1
Equivalent Circuit
BC237,BC238,BC239,!ꢂ-ꢃꢄꢂꢅꢄꢁ.ꢂꢅ
ꢀ
Solid dot=Green molding compound device,
if none,the normal device
///,ꢀꢁ.ꢂꢀ
ORDERING INFORMATION
Part Number
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Packing Method
Pack Quantity
1000pcs/Bag
2000pcs/Box
1000pcs/Bag
2000pcs/Box
1000pcs/Bag
2000pcs/Box
BC237
Bulk
Tape
Bulk
Tape
Bulk
Tape
-TA
-TA
-TA
BC237
BC238
BC238
BC239
BC239
MAXIMUM RATINGS (Ta =25℃ unless otherwise noted)
Symbol
Parameter
Value
45
Unit
Collector-Emitter Voltage
BC237
VCEO
V
25
BC238/239
BC237
age
Emitter-Base Volt
6
VEBO
V
BC238/239
5
IC
Collector Current -Continuous
Collector Power Dissipation
0.1
350
A
PC
mW
Thermal Resistance,
Junction to Ambient
RθJA
RθJC
357
℃/W
Thermal Resistance, Junction to Case
Junction Temperature
125
150
℃/W
℃
Tj
Storage Temperature
-55~150
Tstg
℃
D,Aug,2017
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1
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T =25 unless otherwise specified
G
a
Parameter
Symbol
Test
conditions
BC237
Min
Typ
Max
Unit
IC=100μA, IE=0
50
30
45
25
6
Collector-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
V
BC238/239
BC237
IC=2mA, IB=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
BC238/239
BC237
IE=100μA, IC=0
BC238/239
BC237
5
V
CE=50V, VBE=0
15
nA
VCB=30V,IE=0
BC238/239
BC237A
VCE=5V, IC=10μA
90
hFE(1)
hFE(2)
hFE(3)
BC237B/238B
BC237C/238C/239C
BC237
150
270
V
CE=5V, IC=2mA
120
120
120
200
380
800
800
220
460
800
BC239
DC current gain
BC237A
BC237B/238B
BC237C/238C/239C
VCE=5V, IC=100mA
BC237A
120
180
300
BC237B/238B
BC237C/238C/239C
IC=10mA, IB=0.5mA BC237/238/239
0.2
0.6
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE(sat)
VBE
IC=100mA, IB=5mA
BC237/239
BC238
V
V
V
0.8
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VCE=5V, IC=0.1mA
VCE=5V, IC=2mA
0.83
1.05
0.5
0.55
0.7
V
CE=5V, IC=100mA
0.83
100
120
140
200
240
280
VCE=3V,IC=0.5mA,f=100MHz BC237
BC238
BC239
Transition frequency
fT
MHz
V
CE=5V,IC=10mA,f=100MHz BC237
150
150
150
BC238
BC239
Collector output capacitance
Emitter-base capacitance
Cob
Cib
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
4.5
4
pF
Pf
8
2
VCE=5V, Ic=0.2mA,
f=1kHZ, Rs=2KΩ
VCE=5V, Ic=0.2mA,
BC239
NF
dB
Noise figure
f=1kHZ, Rs=2KΩ, Δf=200Hz BC237
2
2
2
10
10
4
BC238
BC239
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TO-92 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
3.700
1.400
0.550
0.510
4.700
Min
Max
0.146
0.055
0.022
0.020
0.185
A
A1
b
3.300
1.100
0.380
0.360
4.300
3.430
4.300
0.130
0.043
0.015
0.014
0.169
0.135
0.169
c
D
D1
E
4.700
0.185
e
1.270 TYP
0.050 TYP
e1
L
Φ
h
2.440
14.100
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
0.000
0.000
TO-92 Suggested Pad Layout
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D,Aug,2017
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