BC337-25 [JCST]
TO-92 Plastic-Encapsulate Transistors; TO- 92塑封装晶体管
| 型号： | BC337-25 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TO-92 Plastic-Encapsulate Transistors |
| 文件： | 总1页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40
TRANSISTOR (NPN)
TO-92
BC338, -16,-25,-40
FEATURES
1. COLLECTOR
2. BASE
Power dissipation
PCM:
0.625
W (Tamb=25℃)
3. EMITTER
Collector current
ICM:
0.8
A
1 2 3
Collector-base voltage
VCBO
:
BC337 50
BC338 30
V
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
VCBO
Ic= 100µA, IE=0
Collector-base breakdown voltage
50
30
V
V
BC337
BC338
IC= 10 mA , IB=0
IE= 10µA, IC=0
Collector-emitter breakdown voltage
VCEO
45
25
V
V
BC337
BC338
VEBO
ICBO
5
V
Emitter-base breakdown voltage
Collector cut-off current
V
CB= 45 V, IE=0
0.1
0.1
µA
µA
BC337
V
CB= 25V, IE=0
BC338
Collector cut-off current
ICEO
VCE= 40 V, IB=0
CE= 20 V, IB=0
0.2
0.2
µA
µA
BC337
BC338
V
IEBO
VEB= 4 V, IC=0
0.1
µA
Emitter cut-off current
DC current gain
100
100
160
250
60
630
250
400
630
BC337/BC338
hFE(1)
VCE=1V, IC= 100mA
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
HFE(2)
VCE=1V, IC= 300mA
VCE(sat)
IC=500 mA, IB= 50 mA
0.7
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VBE(sat)
IC= 500 mA, IB=50 mA
VCE= 5V, IC= 10mA
210
MHz
Transition frequency
f T
f = 100MHz
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