BC347-TO-92 [JCST]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | BC347-TO-92 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总3页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC347 TRANSISTOR (NPN)
TO— 92
FEATURES
Power dissipation
1.EMITTER
2. BASE
PCM : 0.3 W（Tamb=25℃）
Collector current
ICM:
0.1 A
3. COLLECTOR
Collector-base voltage
V(BR)CBO : 50 V
1 2 3
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Test
conditions
MIN
50
45
5
TYP
MAX
UNIT
V
Symbol
V
(BR)CB
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 100μA ， IE=0
IC= 1mA , IB=0
IE= 100μA， IC=0
VCB=50V, IE=0
O
V
(BR)CE
V
O
V
V
(BR)EBO
ICBO
ICEO
IEBO
0.1
0.1
0.1
450
0.3
1
μA
μA
μA
Collector cut-off current
VCE=35V, IB=0
Emitter cut-off current
VEB= 3V, IC=0
DC current gain
hFE
VCE=5 V, IC= 2mA
IC= 10mA, IB= 1mA
IC= 10mA, IB= 1mA
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCEsat
VBEsat
V
V
Transition frequency
VCE=5V,IC=10mA, f=30MHz
125
MHz
fT
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
相关型号：
BC352
Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
MICRO-ELECTRO
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