BC848C(SOT-23) [JCST]
Transistor;型号: | BC848C(SOT-23) |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | Transistor |
文件: | 总3页 (文件大小:2302K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC846A, B
TRANSISTOR (NPN)
SOT-23
BC847A, B, C
BC848A, B, C
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
z
Ideally suited for automatic insertion
z
For Switching and AF Amplifier Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Unit
V
Collector-Base Voltage
80
50
30
BC846
BC847
BC848
VCEO
Collector-Emitter Voltage
V
65
45
BC846
BC847
BC848
30
VEBO
IC
Emitter-Base Voltage
6
V
A
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
0.1
PC
200
150
-65-150
mW
TJ
℃
℃
Tstg
Storage Temperature
DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
A,May,2011
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
80
50
30
65
45
30
6
Typ
Max Unit
Collector-base breakdown voltage
BC846
BC847
BC848
BC846
BC847
BC848
VCBO
IC= 10µA, IE=0
V
Collector-emitter breakdown voltage
VCEO
VEBO
ICBO
IC= 10mA, IB=0
IE= 10µA, IC=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
BC846
BC847
BC848
VCB=70 V , IE=0
VCB=50 V , IE=0
VCB=30 V , IE=0
0.1
0.1
μA
Collector cut-off current
V
CE=60 V , IB=0
VCE=45 V , IB=0
CE=30 V , IB=0
ICEO
IEBO
hFE
μA
μA
V
Emitter cut-off current
DC current gain
VEB=5 V , IC=0
0.1
220
450
800
0.5
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
110
200
420
VCE= 5V, IC= 2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
IC=100mA, IB= 5mA
IC=100mA, IB= 5mA
VCE= 5 V, IC= 10mA
f=100MHz
V
V
1.1
Transition frequency
100
MHz
pF
fT
Collector output capacitance
Cob
VCB=10V,f=1MHz
4.5
A,May,2011
Typical Characteristics
BC846
hFE —— IC
Static Characteristic
18
1000
60uA
COMMON EMITTER
VCE=5V
COMMON
EMITTER
Ta=25℃
54uA
16
48uA
Ta=100 ℃
Ta=25 ℃
42uA
12
8
36uA
30uA
300
24uA
18uA
4
12uA
IB=6uA
100
0.1
0
0
1
2
3
4
5
6
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VBEsat —— IC
VCEsat —— IC
1000
1000
800
600
400
300
100
Ta=25 ℃
Ta=100 ℃
Ta=25 ℃
Ta=100 ℃
30
10
β=20
β=20
0.1
1
10
100
1.0
50
0.1
1
10
100
COLLECTOR CURRENT Ic (mA)
COLLECTOR CURRENT IC (mA)
IC —— VBE
Cob/Cib —— VCB/VEB
100
100
10
1
COMMON EMITTER
f=1MHz
IE=0/IC=0
VCE=5V
Ta=25℃
Ta=100 ℃
Cib
10
Cob
Ta=25 ℃
1
0.1
0.2
0.1
0.1
0.4
0.6
0.8
1
10
20
BASE-EMITTER VOLTAGE VBE (V)
REVERSE BIAS VOLTAGE
V
(V)
IC
PC —— Ta
fT ——
1000
100
10
250
200
150
100
50
VCE=5V
Ta=25℃
0
1
10
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
COLLECTOR CURRENT IC (mA)
A,May,2011
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