BC868-10(SOT-89-3L) [JCST]
Transistor;
| 型号： | BC868-10(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：723K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
BC868 TRANSISTOR (NPN)
FEATURES
z
High current
Low voltage
z
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
℃
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
32
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
20
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
A
PC
500
150
-55~150
mW
℃
TJ
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
32
20
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100μA,IC=0
V
V
ICBO
IEBO
VCB=25V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=5V,IC=0
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE1
VBE2
fT
VCE=1V,IC=500mA
VCE=1V,IC=1A
85
60
50
375
DC current gain
VCE=10V,IC=5mA
IC=1A,IB=100mA
VCE=10V,IC=5mA
VCE=1V,IC=1A
Collector-emitter saturation voltage
Base-emitter voltage
0.5
1
V
V
0.62
V
Transition frequency
VCE=5V,IC=10mA,f=100MHz
40
MHz
CLASSIFICATION OF hFE(1)
Rank
BC868-10
85-160
CBC
BC868-16
100-250
CCC
BC868-25
Range
Marking
160-375
CDC
A,Jun,2011
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