BD13510 [JCST]
Transistor;
| 型号： | BD13510 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD135/137/139 TRANSISTOR (NPN)
TO – 126
FEATURES
1. EMITTER
2. COLLECTOR
3. BASE
z
z
High Current
Complement To BD136, BD138 And BD140
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
Value
45
Unit
BD135
BD137
VCBO
V
60
BD139
BD135
80
45
Collector-Emitter Voltage
VCEO
V
BD137
BD139
60
80
5
VEBO
IC
Emitter-Base Voltage
Collector Current
V
A
1.5
PC
Collector Power Dissipation
1.25
100
W
RθJA
Tj
Thermal Resistance From Junction To Ambient
Junction Temperature
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
IC= 0.1mA,IE=0
BD135
45
60
80
V
BD137
BD139
*
Collector-emitter sustaining voltage
VCEO(SUS)
IC=0.03A,IB=0
BD135
BD137
BD139
45
60
V
80
5
Emitter-base breakdown voltage
V(BR)EBO
ICBO
IE=0.1mA,IC=0
V
Collector cut-off current
Emitter cut-off current
VCB=30V,IE=0
0.1
10
μA
μA
IEBO
VEB=5V,IC=0
*
hFE(1)
VCE=2V, IC=150mA
VCE=2V, IC=5mA
VCE=2V, IC=500mA
IC=500mA,IB=50mA
VCE=2V, IC=500mA
40
25
25
250
*
DC current gain
hFE(2)
*
hFE(3)
*
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
0.5
1
V
V
*
VBE
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
6
10
16
100-250
RANGE
40-100
63-160
A,Oct,2010
相关型号：
BD13516
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
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