C1815O [JCST]
Transistor;
| 型号： | C1815O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C1815 TRANSISTOR (NPN)
TO—92
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
60
Units
V
Collector-Base Voltage
1 2 3
50
V
Collector-Emitter Voltage
5
V
Emitter-Base Voltage
Collector Current -Continuous
150
400
-55-150
mA
mW
PD
Total Device Dissipation
TJ, Tstg
Junction and Storage Temperature
℃
*These ratings are limiting values above which the serviceability
of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Ic= 100 uA, IE=0
60
50
5
V
V
Ic= 0. 1 mA, IB=0
IE= 100 uA, IC=0
V
VCB= 60 V , IE=0
VCE= 50 V , IB=0
0.1
0.1
0.1
700
0.25
1
uA
uA
uA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
VEB
=
5
6
V, IC=0
DC current gain
hFE(1)
VCE
=
V, IC= 2mA
70
80
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
IC= 100mA, IB= 10 mA
IC= 100 mA, IB= 10mA
V
V
VCE= 10 V, IC= 1mA
f=30MHz
MHz
VCB=10V,IE=0
f=1MHZ
VCE= 6 V, IC=0.1 mA
f =1KHz,RG=10K
Collector Output Capacitance
Noise Figure
Cob
NF
3.5
10
pF
dB
CLASSIFICATION OF hFE(1)
Rank
O
Y
GR
200-400
BL
350-700
Range
70-140
120-240
Typical Characteristics
C1815
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