C945O(TO-92) [JCST]
Transistor;
| 型号： | C945O(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
C945
TRANSISTOR (NPN )
1.EMITTER
2.COLLECTOR
3. BASE
FEATURE
z
z
z
Excellent hFE linearity
Low noise
Complementary to A733
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1 2 3
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
150
400
125
-55-125
mA
mW
℃
PC
TJ
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
60
50
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA , IE=0
IC=100μA , IB=0
V
μ
IE=100 A, IC=0
V
μA
μA
VCB=60V, IE=0
0.1
0.1
0.1
700
Collector cut-off current
ICEO
VCE=45V
, IB=0
Emitter cut-off current
IEBO
VEB=5V ,IC=0
μA
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=6V , IC=1mA
70
40
DC current gain
VCE=6V , IC=0.1mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V,IC=10mA,f=30MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.3
1
V
V
200
MHz
pF
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MH
VCE=6V,IC=0.1mA
RG=10kΩ,f=1MHz
3.0
10
z
Noise figure
NF
dB
CLASSIFICATION OF hFE(1)
O
Y
GR
200-400
BL
Rank
Range
70-140
120-240
350-700
A,Jan,2011
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