CESD7V0D7 [JCST]
Transient Suppressor,;
| 型号： | CESD7V0D7 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transient Suppressor, |
| 文件： | 总2页 (文件大小：1117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-723 Plastic-Encapsulate Diodes
SOD-723
CESD7V0D7 ESD Protection Diode
DESCRIPTION
The CESD7V0D7 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z
z
z
z
z
z
Stand−off Voltage:7.0 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) Per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
These are Pb−Free Devices
Maximum Ratings @Ta=25℃
Limit
Unit
Parameter
Symbol
±30
±30
16
IEC61000−4−2(ESD)
Air
KV
Contact
KV
V
ESD voltage
Per Human Body Model
Per Machine Model
400
100
1250
mW
℃/W
℃
Total Power Dissipation on FR-5 Board (Note 1)
Thermal Resistance Junction−to−Ambient
PD
RΘJA
TL
260
Lead Solder Temperature − Maximum (10 Second Duration)
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
A,May,2011
ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Symbol
IPP
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
VC
VRWM
IR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
VBR
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
C
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
IR (μA)
@ VRWM
Max
V
BR (V)
VC (V) @Max
Device
VRWM (V)
IT
IPP(A) +
C (pF)
+
Device
@ IT(Note 2)
IPP
Marking
Max
Min
Max
mA
Max
Max
Typ
CESD7V0D7
E E
7.0
1.0
7.5
8.7
1.0
8.1
14.1
55
+Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
A,May,2011
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