CJ2303 [JCST]
Transistor;
| 型号： | CJ2303 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2303 P-Channel 30-V(D-S) MOSFET
SOT-23
FEATURE
TrenchFET Power MOSFET
1. GATE
2. SOURCE
3. DRAIN
APPLICATIONS
z
z
Load Switch for Portable Devices
DC/DC Converter
MARKING: S3
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
V
±20
-1.9
Continuous Drain Current
A
Continuous Source-Drain Diode Current
Maximum Power Dissipation
IS
-0.83
0.35
PD
W
Thermal Resistance from Junction to Ambient(t≤5s)
Junction Temperature
RθJA
TJ
357
℃/W
150
℃
Storage Temperature
TSTG
-50 ~+150
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±20V
VDS =-30V, VGS =0V
VGS =-10V, ID =-1.9A
VGS =-4.5V, ID =-1.4A
VDS =-5V, ID =-1.9A
-30
-1
V
-3
±100
-1
nA
µA
IDSS
0.158
0.275
0.190
0.330
Drain-Source On-State Resistancea
RDS(on)
gfs
Ω
Forward Transconductancea
Dynamicb
S
1
Input Capacitance
Ciss
Coss
Crss
155
35
25
4
VDS =-15V,VGS =0V,f =1MHz
VDS =-15V,VGS =-10V,ID =-1.9A
VDS =-15V,VGS =-4.5V,ID=-1.9A
f =1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
8
4
Total Gate Charge
Qg
2
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
0.6
1
1.7
8.5
4
17
8
Ω
td(on)
tr
VDD=-15V,
11
11
8
18
18
16
44
45
18
14
RL=10ꢀ, ID =-1.5A,
Turn-Off Delay Time
Fall Time
td(off)
tf
VGEN=-10V,Rg=1ꢀ
ns
Turn-On Delay Time
Rise Time
td(on)
tr
36
37
12
9
V
DD=-15V,
RL=10ꢀ, ID =-1.5A,
GEN=-4.5V,Rg=1ꢀ
Turn-Off Delay Time
Fall Time
td(off)
tf
V
Drain-source Body diode characteristics
Continuous Source-Drain Diode
Current
IS
-1.75
TC=25℃
A
V
Pulse Diode Forward Currenta
ISM
-10
-1.2
Body Diode Voltage
VSD
IS=-1.5A
-0.8
Notes :
a. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
b. Guaranteed by design, not subject to production testing.
A,Dec,2010
Typical Characteristics
CJ2303
Output Characteristics
Transfer Characteristics
-20
-16
-12
-8
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-10V
-8.0V
-6.0V
Ta=25℃
Ta=25℃
Pulsed
Pulsed
-4.5V
-4.0V
-3.5V
VGS=-3.0V
-4
-0
-0
-1
-2
-3
-4
-5
-0
-1
-2
-3
GATE TO SOURCE VOLTAGE VGS (V)
DRAIN TO SOURCE VOLTAGE VDS (V)
RDS(ON) —— ID
RDS(ON) —— VGS
300
250
200
150
100
50
500
400
300
200
100
0
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=-4.5V
ID=-1.9A
VGS=-10V
-0
-4
-8
-12
-16
-20
-0
-4
-8
-12
-16
-20
DRAIN CURRENT ID (A)
GATE TO SOURCE VOLTAGE VGS (V)
IS —— VSD
-10
Ta=25℃
Pulsed
-3
-1
-0.3
-0.1
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
SOURCE TO DRAIN VOLTAGE VSD (V)
A,Dec,2010
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