CJ3407 [JCST]
Transistor;
| 型号： | CJ3407 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3407 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
General Description
The CJ3407 uses advanced trench technology to provide excellent
RDS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
1. GATE
2. SOURCE
3. DRAIN
MARKING: 3407
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
V
±20
-4.1
V
A
Continuous Drain Current
Power Dissipation
PD
350
mW
℃/W
℃
Thermal Resistance from Junction to Ambient
Junction Temperature
RθJA
TJ
357
150
Storage Temperature
Tstg
-55~+150
℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
BVDSS
IDSS
VGS = 0V, ID =-250µA
VDS =-24V,VGS = 0V
VGS =±20V, VDS = 0V
VGS =-10V, ID =-4.1A
VGS =-4.5V, ID =-3A
VDS =-5V, ID =-4A
-30
V
µA
nA
mΩ
mΩ
S
-1
±100
60
IGSS
Drain-source on-resistance (note 1)
RDS(on)
87
5.5
-1
Forward tranconductance (note 1)
Gate threshold voltage
Diode forward voltage (note 1)
Dynamic characteristics (note 2)
Input capacitance
gFS
VGS(th)
VSD
VDS =VGS, ID =-250µA
IS=-1A,VGS=0V
-3
-1
V
V
Ciss
Coss
Crss
700
120
75
pF
pF
pF
VDS =-15V,VGS =0V,f =1MHz
Output capacitance
Reverse transfer capacitance
Switching Characteristics (note 2)
Turn-on delay time
td(on)
tr
8.6
5.0
ns
ns
ns
ns
Turn-on rise time
VGS=-10V,VDS=-15V,
RL=3.6ꢀ,RGEN=3ꢀ
Turn-off delay time
td(off)
tf
28.2
13.5
Turn-off fall time
Notes:
1. Pulse test: Pulse width ≤300µs, duty cycle ≤2%.
2. These parameters have no way to verify.
A,Dec,2010
CJ3407
Typical Characteristics
Output Characteristics
Transfer Characteristics
-25
-20
-15
-10
-5
-5
-4
-3
-2
-1
-0
VGS=-10V
Ta=25℃
VGS=-4.5V
-8V
-5V
VGS=-4V
VGS=-3.5V
-0
-0
-1
-2
-3
-4
-5
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
ID
VGS
RDS(ON)
RDS(ON)
——
——
100
80
60
40
20
140
120
100
80
Ta=25℃
Ta=25℃
VGS=-4.5V
VGS=-10V
ID=-4.3A
60
40
20
-0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
DRAIN CURRENT ID (A)
GATE TO SOURCE VOLTAGE VGS (V)
IS —— VSD
-10
-1
Ta=25℃
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
A,Dec,2010
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