CJP75N75 [JCST]
Transistor;
| 型号： | CJP75N75 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：3004K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
CJP75N75 N-channel MOSFET
General Description
TO-220
It is therefore suitable as primary switch in advanced high-efficiency,
high-frequency isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any applications with low gate drive
requirements.
1. GATE
2. DRAIN
3. SOURCE
FEATURES
Equivalent circuit
z
z
z
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Applications
z
Switching application
MOSFET MAXIMUM RATINGS (Ta =25°C unless otherwise noted)
Symbol Parameter
Value
75
Units
VDSS
VGSS
ID
V
V
Drain-Source voltage
Gate-Source Voltage
±15
78
Continuous Drain Current
Single pulse avalanche energy
Peak diode recovery dv/dt
Power Dissipation
(Note 1)
(Note 3)
(Note 2)
A
EAS
680
10
J
dv/dt
V/ns
2
W
(note 4, Ta=25℃)
(note 5, Tc=25℃)
PD
Maximum Power Dissipation
160
W
RθJA
Thermal Resistance from Junction to Ambient
62.5
℃ /W
TJ
Junction Temperature
Storage Temperature
150
℃
℃
Tstg
-55~+150
Notes:
1. Current limited by package.
2. ISD ≤75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX .
3. Starting TJ = 25℃, ID =37.5A, VDD = 30V .
4. This test is performed with no heat sink at Ta=25℃.
5. This test is performed with infinite heat sink at Tc=25℃.
A,Dec,2010
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
On/Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Diode forward voltage*
Switching Characteristics**
Turn-On Delay Time
BVDSS
IDSS
VGS = 0V, ID =250µA
VDS =75V,VGS = 0V
VGS =±20V, VDS = 0V
VDS =VGS, ID =250µA
VGS =10V, ID =40A
VDS =10V, ID =40A
VGS =0, IS =40A
75
V
µA
nA
V
1
IGSS
±100
4
VGS(th)*
RDS(on)*
gFS*
2
0.008
Ω
S
60
1.2
VSD*
V
td(on)
tr
ns
ns
ns
ns
18.2
15.6
70.5
Turn-On Rise Time
VDD =30V,ID =2.0A, RL=15Ω,
Ω
RG=2.5
VGS =10V,
Turn-Off Delay Time
td(off)
tf
Turn-Off Fall Time
13.8
Dynamic Characteristics**
Input Capacitance
Ciss
Coss
Crss
3100
310
pF
pF
pF
VDS =25V,VGS =0V,f =1.0MHz
Output Capacitance
Reverse Transfer Capacitance
260
*Pulse Test: Pulse width ≤300µs, Duty cycle ≤2% .
** These parameters have no way to verify.
A,Dec,2010
相关型号：
©2020 ICPDF网 联系我们和版权申明