D882O(SOT-89) [JCST]
Transistor,;
| 型号： | D882O(SOT-89) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT -89 Plastic-Encapsulate Transistors
D882 TRANSISTOR（ NPN ）
SOT-89
1.BASE
FEATURES
2.COLLECTOR
3.EMITTER
1
Power dissipation
PCM : 0.75
2
W（Tamb=25℃）
3
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
VCBO
Parameter
Value
40
Units
V
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
30
V
6
V
3
A
PC
0.75
150
-55-150
W
℃
℃
TJ
Junction Temperature
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
40
30
6
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
Ic= 100μA， IE=0
Ic= 10 mA， IB=0
IE= 100 μA， IC=0
VCB= 40 V， IE=0
VCE= 30 V， IB=0
V
1
1
µA
µA
µA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
VEB= 6
V， IC=0
CE= 2 V, IC= 1A
CE= 2 V, IC= 100mA
1
hFE
（ ）
1
V
V
60
32
400
DC current gain
hFE
（ ）
2
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
0.5
2
V
V
V
CE= 5V , Ic=0.1A
Transition frequency
fT
50
MHz
f =10MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
200-400
Range
60-120
100-200
160-320
Typical characteristics
D882
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