DTA114TSA [JCST]
Digital transistors (built-in resistors); 数字晶体管（内置电阻）
| 型号： | DTA114TSA |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Digital transistors (built-in resistors) |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTA114TE/ DTA114TUA
/DTA114TCA/ DTA114TKA/ DTA114TSA
TRANSISTOR (PNP)
FEATURES
· Built-in bias resistors enable the configuration of an
inverter circuit without connecting extemal input resistors.
· The bias resistors conisit of thin-film resistors with
complete isolation to without connecting extemal input.
They also have the advantage of almost completely
Eliminating parasitic effects.
· Only the on/off conditions need to be set for operation,
marking device design easy.
PIN CONNENCTIONS AND MARKING
DTA114TE
DTA114TUA
(1) Base
(1)Base
(2) Emitter
(3) Collector
(2)Emitter
(3)Collector
SOT-323
Addreviated symbol: 94
Addreviated symbol: 94
SOT-523
DTA114TKA
DTA114TCA
(1) Base
(1) Base
(2) Emitter
(3) Collector
(2) Emitter
(3) Collector
SOT-23
Addreviated symbol: 94
SOT-23-3L
Addreviated symbol: 94
DTA114TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
LIMITS(DTA114T□)
Units
E
UA
KA
-50
CA
SA
VCBO
VCEO
VEBO
IC
V
V
Collector-Base Voltage
-50
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Collector Dissipation
-100
200
mA
mW
℃
PC
150
300
TJ, Tstg
Junction and Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
-50
V
Ic=-50µA,IE=0
Ic=-1mA,IB=0
Collector-emitter
voltage
breakdown
V(BR)CEO
-50
-5
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)EBO
ICBO
IEBO
V
IE=-50µA,IC=0
VCB=-50V,IE=0
-0.5
-0.5
600
-0.3
uA
uA
VEB=-4V,IC=0
hFE
100
7
250
VCE=-5V,IC=-1mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=-10mA,IB=-1mA
VCE=-10V,IC=-5mA, f=100MHz
V
250
10
MHz
kΩ
Imput resistor
R1
13
Typical Characteristics
相关型号：
DTA114TSATP
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SPT, SC-72, 3 PIN
ROHM
DTA114TUA
Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors
TYSEMI
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