DTA143TCA [JCST]
Digital transistors (built-in resistors); 数字晶体管（内置电阻）
| 型号： | DTA143TCA |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Digital transistors (built-in resistors) |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTA143TE/DTA143TUA/DTA143TKA
/DTA143TSA/ DTA143TCA
DIGITAL TRANSISTOR (PNP)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input.They also have the advantage of almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device design easy.
PIN CONNENCTIONS AND MARKING
DTA143TE
DTA143TUA
(1) Base
(1)Base
(2) Emitter
(3) Collector
(2)Emitter
(3)Collector
SOT-323
Addreviated symbol: 93
Addreviated symbol: 93
SOT-523
DTA143TKA
DTA143TCA
(1) Base
(1) Base
(2) Emitter
(3) Collector
(2) Emitter
(3) Collector
SOT-23
Addreviated symbol: 93
SOT-23-3L
Addreviated symbol: 93
DTA143TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
Absolute maximum ratings(Ta=25℃)
Limits (DTA143T□ )
Parameter
Symbol
Unit
E
UA
CA
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
-50
V
V
-50
-5
V
-100
mA
Collector Power dissipation
PC
150
200
300
mW
Junction temperature
Storage temperature
Tj
150
℃
℃
Tstg
-55~150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
-50
-50
-5
Typ
Max.
Unit
V
Conditions
Ic=-50µA
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
V
Ic=-1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
V
IE=-50µA
-0.5
µA
µA
V
VCB=-50V
-0.5
-0.3
600
6.11
VEB=-4V
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
IC=-5mA,IB=-0.25mA
VCE=-5V,IC=-1mA
100
R1
3.29
4.7
KΩ
Transition frequency
fT
250
MHz
VCE=-10V ,IE=5mA,f=100MHz
Typical Characteristics
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