DTC144ECA [JCST]

Digital transistors (built-in resistors); 数字晶体管(内置电阻)
DTC144ECA
型号: DTC144ECA
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Digital transistors (built-in resistors)
数字晶体管(内置电阻)

晶体 小信号双极晶体管 数字晶体管
文件: 总2页 (文件大小:121K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
Digital transistors (built-in resistors)  
DTC144EE/DTC144EUA  
/DTC144ECA/DTC144EKA/DTC144ESA  
DIGITAL TRANSISTOR (NPN)  
FEATURES  
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input  
resistors(see equivalent circuit).  
2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely eliminating parasitic effects.  
3. Only the on/off conditions need to be set for operation, making device design easy.  
PIN CONNENCTIONS AND MARKING  
DTC144EE  
DTC144EUA  
Addreviated symbol: 26  
SOT-523  
SOT-323  
Addreviated symbol: 26  
DTC144ECA  
DTC144EKA  
SOT-23  
SOT-23-3L  
Addreviated symbol: 26  
SOT-23  
Addreviated symbol: 26  
DTC144ESA  
TO-92S  
Absolute maximum ratings(Ta=25)  
Limits (DTC144E)  
Parameter  
Symbol  
Unit  
E
UA  
CA  
KA  
SA  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC  
50  
V
V
50  
5
V
100  
mA  
mW  
Collector Power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
200  
300  
Tj  
150  
Tstg  
-55~150  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
VCC=5V ,IO=100µA  
VO=0.3V ,IO=2mA  
IO/II=10mA/0.5mA  
VI=5V  
0.5  
Input voltage  
V
3
Output voltage  
Input current  
0.3  
0.18  
0.5  
V
mA  
µA  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
IO(off)  
GI  
VCC=50V ,VI=0  
VO=5V ,IO=5mA  
68  
32.9  
0.8  
R1  
47  
1
61.1  
1.2  
K  
R2/R1  
fT  
250  
MHz  
VO=10V ,IO=5mA,f=100MHz  
Typical Characteristics  

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