DTC144TCA [JCST]

Digital transistors (built-in resistors); 数字晶体管(内置电阻)
DTC144TCA
型号: DTC144TCA
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Digital transistors (built-in resistors)
数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:101K)
中文:  中文翻译
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
Digital transistors (built-in resistors)  
DTC144TE/ DTC144TUA/  
DTC144TCA/DTC144TKA/DTC144TSA  
DIGITAL TRANSISTOR (NPN)  
Features  
1) Built-in bias resistors enable the configuration of an inverter circuit without  
connecting external input resistors (see equivalent circuit).  
2) The bias resistors consist of thin-film resistors with complete isolation to  
allow negative biasing of the input. They also have the advantage of almost  
completely eliminating parasitic effects.  
3) Only the on/off conditions need to be set for operation, making device  
design easy.  
PIN CONNENCTIONS AND MARKING  
DTC144TE  
DTC144TUA  
(1) Base  
(1)Base
(2) Emitter  
(3) Collector  
(2)Emitter
(3)Collector
SOT-323  
Addreviated symbol: 06  
Addreviated symbol: 06  
SOT-523  
DTC144TKA  
DTC144TCA  
(1) Base  
(1) Base  
(2) Emitter  
(3) Collector  
(2) Emitter  
(3) Collector  
SOT-23  
Addreviated symbol: 06  
SOT-23-3L  
Addreviated symbol: 06  
DTC144TSA  
(1) Emitter  
(2) Collector  
(3) Base  
TO-92S  
MAXIMUM RATINGS* TA=25unless otherwise noted  
Symbol  
Parameter  
LIMITS(DTC144T)  
Units  
E
UA  
KA  
50  
CA  
SA  
VCBO  
VCEO  
VEBO  
IC  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
5
V
Collector Current -Continuous  
Collector Dissipation  
100  
mA  
mW  
PC  
150  
200  
300  
Junction temperature  
Tj  
150  
-55~+150  
TJ, Tstg  
Junction and Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
Ic=50µA,IE=0  
Ic=1mA,IB=0  
conditions  
MIN  
50  
50  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V
V
IE=50µA,IC=0  
VCB=50V,IE=0  
VEB=4V,IC=0  
0.5  
0.5  
600  
0.3  
uA  
uA  
IEBO  
DC current gain  
hFE  
100  
300  
VCE=5V,IC=1mA  
IC=5mA,IB=0.5mA  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
250  
47  
MHz  
kΩ  
VCE=10V,IE=-5mA, f=100MHz  
Imput resistor  
R1  
32.9  
61.1  
Typical Characteristics  

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