DTC144TSA [JCST]
Digital transistors (built-in resistors); 数字晶体管（内置电阻）
| 型号： | DTC144TSA |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Digital transistors (built-in resistors) |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC144TE/ DTC144TUA/
DTC144TCA/DTC144TKA/DTC144TSA
DIGITAL TRANSISTOR (NPN)
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to
allow negative biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device
design easy.
PIN CONNENCTIONS AND MARKING
DTC144TE
DTC144TUA
(1) Base
(1)Base
(2) Emitter
(3) Collector
(2)Emitter
(3)Collector
SOT-323
Addreviated symbol: 06
Addreviated symbol: 06
SOT-523
DTC144TKA
DTC144TCA
(1) Base
(1) Base
(2) Emitter
(3) Collector
(2) Emitter
(3) Collector
SOT-23
Addreviated symbol: 06
SOT-23-3L
Addreviated symbol: 06
DTC144TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
LIMITS(DTC144T□)
Units
E
UA
KA
50
CA
SA
VCBO
VCEO
VEBO
IC
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
5
V
Collector Current -Continuous
Collector Dissipation
100
mA
mW
℃
PC
150
200
300
Junction temperature
Tj
150
-55~+150
TJ, Tstg
Junction and Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic=50µA,IE=0
Ic=1mA,IB=0
conditions
MIN
50
50
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
V
IE=50µA,IC=0
VCB=50V,IE=0
VEB=4V,IC=0
0.5
0.5
600
0.3
uA
uA
IEBO
DC current gain
hFE
100
300
VCE=5V,IC=1mA
IC=5mA,IB=0.5mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
250
47
MHz
kΩ
VCE=10V,IE=-5mA, f=100MHz
Imput resistor
R1
32.9
61.1
Typical Characteristics
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