FMMDT5451-WBFBP-06C [JCST]
TRANSISTOR; 晶体管
| 型号： | FMMDT5451-WBFBP-06C |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR |
| 文件： | 总6页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Transistors
FMMDT5451 TRANSISTOR
WBFBP-06C
(2×2×0.5)
unit: mm
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
FEATURES
z
z
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Complementary Pair
One 5551-Type NPN, One 5401-Type PNP
Ultra-Small Surface Mount Package
1
APPLICATION
Ideal for Medium Power Amplification and Switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: KNM
KNM
E1,B1,C1=NPN 5551 Section
E2,B2,C2=PNP 5401 Section
5551 MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Parameter
Value
180
Units
V
Symbol
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
160
V
6
V
Collector Current -Continuous
Collector Dissipation
0.2
A
PC
0.15
625
W
RθJA
TJ
Thermal Resistance, Junction to Ambient
Junction Temperature
K/W
℃
℃
150
Tstg
Storage Temperature range
-55-150
5401 MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-160
-150
-5
Units
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
Collector Current -Continuous
Collector Dissipation
-0.2
A
PC
0.15
625
W
K/W
℃
℃
RθJA
TJ
Thermal Resistance, Junction to Ambient
Junction Temperature
150
Tstg
Storage Temperature range
-55-150
5551 ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
180
160
6
V
V
Ic=100µA,IE=0
V(BR)CEO Ic=1mA, IB=0
V(BR)EBO
ICBO
V
IE= 10µA, IC=0
VCB= 120V IE=0
VEB= 4V, IC=0
50
50
nA
nA
Emitter cut-off current
IEBO
hFE
VCE= 5 V, IC= 1 mA
VCE= 5 V, IC = 10 mA
VCE= 5 V, IC= 50 mA
80
80
30
（
（
（
）
）
）
1
2
3
DC current gain
250
hFE
hFE
IC= 10 mA, IB= 1 mA
IC= 50 mA, IB= 5 mA
IC= 10 mA, IB= 1 mA
IC= 50 mA, IB= 5 mA
0.15
0.2
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCEsat
V
V
VBEsat
1
Transition frequency
V
CE=10V,IC=10mA,,f=100MHz
100
300
6
MHz
pF
fT
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
VCE=5V,Ic=0.2mA,
f=1KHZ,Rg=1kΩ
Noise figure
NF
8
dB
5401 ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-100µA , IE=0
-160
-150
-5
V
V
V(BR)CEO IC= -1mA ,
V(BR)EBO IE=-10µA,
IB=0
IC=0
V
ICBO
IEBO
VCB=-120 V , IE=0
VEB=-3V , IC=0
-0.05
-0.05
µA
µA
Emitter cut-off current
hFE(1)
hFE(2)
hFE(3)
VCE=-5 V, IC= -1mA
VCE=-5 V, IC= -10mA
VCE=-5 V, IC= -50mA
50
60
50
DC current gain
240
VCE(sat)1 IC=-10 mA, IB=-1mA
VCE(sat)2 IC=-50 mA, IB=-5mA
VBE(sat)1 IC= -10 mA, IB=-1mA
VBE(sat)2 IC= -50 mA, IB=-5mA
-0.2
-0.5
-1
V
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
-1
VCE= -10V, IC= -10mA
f T
100
300
MHz
f = 100MHz
Output Capacitance
Noise Figure
Cob
NF
VCB=-10V, IE= 0,f=1MHz
VCE= -5.0V, IC= -200µA,
RS= 10Ω,f = 1.0kHz
6
pF
8.0
dB
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.450
0.000
0.150
1.900
1.900
Max.
0.550
0.100
0.250
2.100
2.100
Min.
0.018
0.000
0.006
0.075
0.075
Max.
0.022
0.004
0.010
0.083
0.083
A
A1
b
D
E
D1
E1
e
L
k
0.590 REF.
0.590 REF.
0.650 TYP.
0.400 REF.
0.300 REF.
0.500 REF.
0.023 REF.
0.023 REF.
0.026 TYP.
0.016 REF.
0.012 REF.
0.020 REF.
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APPLICATION CIRTCUITS
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