FUMG9N-WBFBP-05C [JCST]
TRANSISTOR; 晶体管
| 型号： | FUMG9N-WBFBP-05C |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR |
| 文件： | 总3页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-05C Digital transistors (built-in resistors)
FUMG9N TRANSISTOR
WBFBP-05C
(2×2×0.5)
unit: mm
DESCRIPTION
Epitaxial planar type NPN silicon transistor
(Built-in resistor type)
FEATURES
1
z
Two DTC114E in a package.
z
Mounting cost and area can be cut in half.
APPLICATION
Dual Digital Transistors for Inverter Drive
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent circuit
MARKING:G9
G9
Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Symbol
VCC
VIN
Limits
Unit
V
50
-10~40
50
V
IO
Output current
mA
IC(MAX)
Pd
100
Power dissipation
Junction temperature
Storage temperature
150
mW
℃
Tj
150
Tstg
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Min.
Typ
Max.
Unit
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=10 mA
IO/II=10mA/0.5mA
VI=5V
0.5
Input voltage
V
3
Output voltage
Input current
0.3
0.88
0.5
V
mA
µA
Output current
IO(off)
GI
VCC=50V, VI=0
VO=5V ,IO=5mA
DC current gain
Input resistance
Resistance ratio
Transition frequency
30
7
R1
10
1
13
KΩ
R2/R1
fT
0.8
1.2
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
Typical Characteristics
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.450
0.000
0.150
1.900
1.900
Max.
0.550
0.100
0.250
2.100
2.100
Min.
0.018
0.000
0.006
0.075
0.075
Max.
0.022
0.004
0.010
0.083
0.083
A
A1
b
D
E
D1
E1
e
L
k
0.550 REF.
0.550 REF.
0.650 TYP.
0.500 REF.
0.450 REF.
0.500 REF.
0.022 REF.
0.022 REF.
0.026 TYP.
0.020 REF.
0.018 REF.
0.020 REF.
z
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