K596-TO-92S [JCST]
Si N-CHANNEL JUNCTION FET; 姒嗯道结型场效应管
| 型号： | K596-TO-92S |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Si N-CHANNEL JUNCTION FET |
| 文件： | 总3页 (文件大小：604K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO-92S
K596
Si N-CHANNEL JUNCTION FET
1.SOURCE
FEATURES
Power dissipation
2.GATE
PCM: 0.1W（Tamb=25℃）
Gate Current
I G: 10mA
Drain current
I D: 1mA
3.DRAIN
123
Drain-Source voltage
BVGDO: -20
V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Gate-Drain breakdown Voltage
Gate-Source cut-off Voltage
Drain Current
Symbol
BVGDO
VGS(off)
IDSS
Test
conditions
MIN
-20
TYP
MAX
UNIT
V
IG= -100μA
VDS= 5V , ID=1μA
-0.6
-1.5
800
V
μA
mS
VDS= 5 V , VGS=0
100
0.4
Forward Transfer Admittance
Input Capacitance
|YFS|
VDS= 5V , VGS=0, f=1KHz
VDS=5V, VGS=0, f=1MHz
1.2
3.5
Ciss
pF
pF
VDS= 5 V, V =0
GS
Output Capacitance
CRSS
0.65
f = 1MHz
IDSS Classification
Classification
A
B
C
210-350
D
E
IDSS (µA)
100-170
150-240
320-480
440-800
TO-92S PACKAGE OUTLINE DIMENSIONS
D
θ
D1
b
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
1.240
0.660
0.380
0.360
3.850
2.970
3.010
1.620
0.860
0.550
0.510
4.150
3.270
3.310
0.056
0.026
0.015
0.014
0.152
0.117
0.119
0.064
0.034
0.022
0.020
0.163
0.129
0.130
A1
b
c
D
D1
E
1.270TYP
45°TYP
0.050TYP
45°TYP
e
e1
L
2.440
2.640
0.096
0.594
0.104
0.610
15.100
15.500
θ
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