KSA1175O [JCST]
Transistor;
| 型号： | KSA1175O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
KSA1175 TRANSISTOR (PNP)
TO-92S
FEATURES
1. EMITTER
z
Collector-Base Voltage
Complement to KSC2785
z
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
Units
V
-50
V
-5
V
-0.15
0.25
150
A
PC
W
℃
℃
TJ
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-60
-50
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-0.1mA, IE=0
V(BR)CEO IC=-10mA, IB=0
V(BR)EBO IE=-10μA, IC=0
V
V
ICBO
IEBO
hFE
VCB=-60V, IE=0
-0.1
-0.1
700
-0.3
-0.8
μA
μA
Emitter cut-off current
VEB=-5V, IC=0
DC current gain
VCE=-6V, IC=-1mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-1mA
VCE=-6V, IC=-10mA
VCB=-10V, IE=0,f=1MHz
40
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
-0.5
50
Transition frequency
MHz
pF
fT
Collector output capacitance
Cob
2.8
VCE=-6V, IC=-0.3mA,
Noise figure
NF
20
dB
f=100HZ, Rg=10KΩ
CLASSIFICATION OF hFE
Rank
R
O
Y
G
L
40-80
70-140
120-240
200-400
350-700
Range
Typical Characteristics
KSA1175
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