KSA931O [JCST]
Transistor;
| 型号： | KSA931O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 开关 晶体管 |
| 文件： | 总1页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
KSA931 TRANSISTOR (PNP)
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
y
y
Low Frequency Amplifier
Medium Speed Switching
123
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
-80
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-8
-0.7
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
A
PC
1
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
IC= -100μA, IE=0
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)
CBO
-80
-60
-8
V
V(BR)
CEO
IC= -10mA , IB=0
V
V(BR)
EBO
IE= -100μA, IC=0
V
μA
μA
ICBO
IEBO
hFE
VCB= -60 V, IE=0
-0.1
-0.1
320
-0.7
-1.2
Emitter cut-off current
VEB= -5V, IC=0
DC current gain
VCE=-2 V, IC= -50mA
IC= -500mA, IB= -50mA
IC= -500mA, IB= -50mA
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
VCE= -10 V, IC= -50mA
100
13
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
pF
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
160-320
Range
40-80
70-140
120-240
A,Apr,2011
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