KSC1730O [JCST]
Transistor;
| 型号： | KSC1730O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KSC1730 TRANSISTOR (NPN)
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
z
z
High Transition Frequency
Low VCE(sat)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
30
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
15
V
5
V
Collector Current
50
mA
mW
℃/W
℃
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
200
RθJA
Tj
625
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
30
15
5
Typ
Max
Unit
V
Collector-base breakdown voltage
IC= 0.01mA,IE=0
IC=5mA,IB=0
Collector-emitter
breakdown
V
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
IE=0.01mA,IC=0
VCB=12V,IE=0
V
0.1
240
0.5
1.5
μA
hFE
VCE=10V, IC=5mA
IC=10mA,IB=1mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC= 5mA
40
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
Cob
V
pF
fT
800
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
RANGE
40-80
70-140
120-240
A,Dec,2010
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