KSC1730Y [JCST]

Transistor;
KSC1730Y
型号: KSC1730Y
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Transistor

放大器 晶体管
文件: 总1页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
KSC1730 TRANSISTOR (NPN)  
1.EMITTER  
2.COLLECTOR  
3.BASE  
FEATURES  
z
z
High Transition Frequency  
Low VCE(sat)  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
30  
Units  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
15  
V
5
V
Collector Current  
50  
mA  
mW  
/W  
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
200  
RθJA  
Tj  
625  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
30  
15  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
IC= 0.01mA,IE=0  
IC=5mA,IB=0  
Collector-emitter  
breakdown  
V
Emitter-base breakdown voltage  
Collector cut-off current  
DC current gain  
IE=0.01mA,IC=0  
VCB=12V,IE=0  
V
0.1  
240  
0.5  
1.5  
μA  
hFE  
VCE=10V, IC=5mA  
IC=10mA,IB=1mA  
VCB=10V,IE=0, f=1MHz  
VCE=10V,IC= 5mA  
40  
Collector-emitter saturation voltage  
Collector output capacitance  
Transition frequency  
VCE(sat)  
Cob  
V
pF  
fT  
800  
MHz  
CLASSIFICATION OF hFE  
RANK  
R
O
Y
RANGE  
40-80  
70-140  
120-240  
A,Dec,2010  

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