KSC2330O [JCST]
Transistor;
| 型号： | KSC2330O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
KSC2330 TRANSISTOR（ NPN ）
1.EMITTER
FEATURE
Power dissipation
2.COLLECTOR
3.BASE
PCM : 1 W（Tamb=25℃）
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO : 300 V
123
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Test
conditions
MIN
300
300
7
MAX
UNIT
V
Ic= 100μA ， IE=0
IC= 5mA, IB=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
IE= 100μA， IC=0
V
μA
ICBO
VCB=200V, IE=0
0.1
240
0.5
hFE（
DC current gain
VCE=10 V, IC= 20mA
IC= 10m A, IB= 1mA
40
50
Collector-emitter saturation voltage
VCE(sat)
V
Transition frequency
f
VCE= 30 V, IC= 10mA
MHz
T
CLASSIFICATION OF h
FE
Rank
R
O
Y
Range
40-80
120-240
70-140
TO-92MOD PACKAGE OUTLINE DIMENSIONS
D
D1
φ
b1
b
e
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
4.700
1.730
0.400
0.900
0.400
5.800
4.000
8.400
5.100
2.030
0.600
1.100
0.500
6.200
0.185
0.068
0.016
0.035
0.016
0.228
0.157
0.331
0.201
0.080
0.024
0.043
0.020
0.244
A
A1
b
b1
c
D
D1
E
8.800
0.346
1.500TYP
0.059TYP
e
2.900
3.100
13.450
1.600
0.380
0.114
0.514
0.122
0.530
0.063
0.015
e1
L
13.050
Ö
0.000
0.000
相关型号：
KSC2330OBU
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
FAIRCHILD
KSC2330YNBU
Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN
FAIRCHILD
KSC2330YTA
NPN Epitaxial Silicon Transistor, 3LD, TO-92L, NON-JEDEC 8MM TALL BODY LD FORM TA TYPE, 2000/AMMO
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明